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Top-Features:
- 600V max. Drain-Source Voltage (Vds)
- 0,32A max. Continuous Drain Current at Ta 25°
- 4,4Ω max. Drain-Source On-Resistance (Rds on)
- 2V min. Gate Threshold Voltage (Vgs th)
- 10ns Turn On Delay Time (td on)
Produktinformationen "IRFDC20PBF Power MOSFET"
Leistungs-MOSFET im HVMDIP- Gehäuse.
Technische Daten:
- max. Drain-Source Voltage (Vds): 600 V
- max. Continuous Drain Current at Ta 25°: 0,32 A
- max. Drain-Source On-Resistance (Rds on): 4,4 Ω
- min. Gate Threshold Voltage (Vgs th): 2 V
- Turn On Delay Time (td on): 10 ns
- Turn Off Delay Time (td off): 30 ns
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